| 摘要 |
<p>PURPOSE:To prevent the occurrence of a rise on the side end surface of a semiconductor pellet by beveling the corners formed of a pair of main surfaces disposed substantially in parallel and at opposite side each other and side end surfaces communicating with the main surfaces each other. CONSTITUTION:The profile of a diode semiconductor pellet 1 formed with a pn junction is formed substantially in parallel with each other and specified by a pair of main surfaces 11, 12 disposed oppositely to each other and side end surface 13 communicating with the main surfaces each other. The corners of the surfaces 11, 12 and the surface 13 are beveled, and the surface 13 is curved at the side near the surfaces 11, 12. On the surface of the pellet 1 are formed a surface stabilized film 2, a salient pole layer 3, and an electrode layer 4.</p> |
