| 摘要 |
PURPOSE:To improve on the propagation delay time in a bipolar transistor to be used for an ultra-high speed logical LSI by reducing the junction capacitance of a collector substrate. CONSTITUTION:A flush-type layer 103, a channel-cut region 107 and an oxidized film 102 are formed on the surface of the substrate 101 which consists of p-type silicon of low concentration. An epitaxial layer is grown on the above formation. At this time, the epitaxial layer grown on the silicon single crystal becomes a single crystal 104. Then the active region alone of the transistor consisting of a passive base region 111 of high concentration, an emitter region 112 and a contact region 113 are formed in the single crystal. This solves the problem of leakage which arises during polycrystallization, and as the separate pressure resistance between elements is set by the channel-cut section 107 and the section without a channel-cut, the collector substrate junction capacitance is lessened, thereby giving an improvement in propagation delay time. |
