| 摘要 |
PURPOSE:To improve the integrity of a semiconductor device by etching a fine width groove by an ion-milling or the like in a step of forming isolation region between elements of the device. CONSTITUTION:A resist pattern is formed on a silicon substrate 1, and an etched groove 3 is formed in the substrate 1 by an ion-milling. A SiO2 is then sputtered to form a SiO2 buried layer 4 in the groove 3. A resist film 6' is then coated on the layer 4. With the film 6' as a mask the layer 5 is then removed, a residual resist film 6' is then removed, and an isolation region 7 between elements made of SiO2 is formed. Since the ion-milling can thus locally etch the semiconductor substrate, it can form an etched groove of fine width of prevent the intrusion of insulator into a transistor region and to accordingly improve the integrity of a semiconductor device. |
