发明名称 MAGNETIC OPTICAL MEMORY ELEMENT
摘要 <p>A magneto-optic memory element consisting of a substrate provided with an amorphous layer of an alloy of a rare-earth metal and a transition metal. The layer has a uniaxial magnetic anisotropy. Such memory elements are suitable for storing digital information in the form of magnetized areas, the magnetizaiton direction of which can be read by means of the Kerr effect or Faraday effect. By adding bismuth to the alloy, the Kerr rotation and Faraday rotation can each be increased considerably, so that simpler reading of the stored information is possible.</p>
申请公布号 JPS55130106(A) 申请公布日期 1980.10.08
申请号 JP19800037347 申请日期 1980.03.24
申请人 PHILIPS NV 发明人 MAARIISU URUNERUUBUIRU;PIITAA HANSEN
分类号 H01F10/12;G11B11/10;G11B11/105;G11C13/06;H01F10/13;H01F10/14;H01F41/14;H01F41/20 主分类号 H01F10/12
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