| 摘要 |
1418278 Sputter etching INTERNATIONAL BUSINESS MACHINES CORP 17 May 1974 [29 June 1973] 22230/74 Addition to 1361214 Heading C7F In the manufacture of an integrated circuit device, a Si substrate is formed with a layer of SiO 2 or Si 3 N 4 , 11, and metal strips 20, 22 to which is applied a sputtered coating of SiO 2 , 23. After deposition, or during deposition (see Figs. 2A<SP>1</SP>- 2C<SP>1</SP>), the layer 23 is sputter-etched" until the raised portion 24 above the narrow strip 20 is removed to the overall level of the layer, whilst leaving raised portion 25 above the wider strip 22. A via hole is formed in layer 23 down to the strip 20 by using HF and a photo-resit 26, in which via hole a metal strip 30 is deposited. Finally, an overlayer of SiO 2 or Si 3 N 4 may be applied. The metal of strips 20, 22, 30 is selected from Al, Al-Cu, Pt, Pd, Cr, and Mo. The process may be used to selectively level the coating above a narrowed portion of a wide strip Figs.3 and 4; (not shown). |
