| 摘要 |
PURPOSE:To eliminate a synthesis efficiency decreasing phenomenon caused by the phase difference of respective distribution waves and increase the high frequency gain of a semiconductor device by disposing the unit chip of a plurality of three- terminal semiconductor element in the same direction as the connecting direction of an input terminal to an output terminal. CONSTITUTION:A plurality of unit chips 1 are disposed in the same direction as a connecting direction of an input terminal 11 to an output terminal 12 and bonded thereto. The coming radio wave introduced into the terminal 11 is distributed through a gate bonding area 9 into the respective chips, amplified, and synthesized thereafter through the bonding area 10 at the terminal 12. As a result, since the chips are so disposed in parallel connection as to be in the same direction as the connecting direction of the input terminal to the output terminal of the element, the phases of the radio waves at the output terminal to be distributed again and synthesized at the respective chips may become in principle the same phase. |
