| 摘要 |
PURPOSE:To microminiaturize an emitter region of a semiconductor device without an overetching by forming a contact hole on an emitter by a self-alignment at the same position as the hole in a step of diffusing the emitter. CONSTITUTION:There are formed a base region 2 and a SiO2 film 3 produced by a thermal oxidation of a planar semiconductor element on a silicon substrate 1. A masking film 4 having a surface stabilizing function is then formed on the entire surface by a method without thermal oxidiation on the film 3. A hole is then perforated by a photoetching process at predetermined portion on the base, and impurity is diffused to form an emitter region 5. A thermal oxidation film 3' and the masking film 4 on the region 5 are partially etched and removed to form a contact hole 6 at the emitter. Finally, a base contact hole 7 is formed by a photoetching process at the predetermined portion on the base region 2. |
