MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve reliability through elimination of the exposed region of a p-n junction by a method wherein, in the manufacture of a semiconductor device that has an alloy junction, the region except the connection region for a metal lead wire is insulated and an alloy between a metal film of a connection region and a semiconductor substrate is formed. CONSTITUTION:An Al film 12 is applied by evaporation on an n-type substrate 11 and a lead wire electrode 13 is fastened by pressing. Next, an insulating layer 14 made of alumina is formed by anodization. At this process an Al film 12 beneath the electrode 13 is not developed into insulation because it is masked. Next, an Al film beneath the electrode 13 is fused and a p-type alloy region 17 is formed. At this period an Al part does not flow out because it is surrounded by an alumina part, and an exposed region of an p-n junction is eliminated, because a part of a junction formed on the surface is protected with an alumina film, and reliability is improved. Next, with a substrate 11, a ceramic substrate 18 and a soldering electrode 19 assembled by die bonding, a diode is completed.