Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques

摘要

A method of growing high-quality, super-abrupt, thin-film epitaxial layers independent of a GaAs substrate. An elemental semiconductor of germanium is used to initiate growth of an active material, typically doped n-type. A semi-insulating layer or n+ layer is grown on the n-type active material. Subsequent to growth of the semi-insulating layer, a thin cap of germanium is deposited on the composite. Gold is deposited onto the germanium cap to form an eutectic-alloy layer with the germanium. The alloy is formed and the composite is bonded to a metal, glass, or ceramic substrate and the semiconductor (germanium) is removed by etching and the n-layer is finally etched to provide a clean-up and to tailor the layer to a desired thickness. Subsequent steps are employed to form desired structures such as field-effect transistors or Schottky-barrier devices.