| 摘要 |
PURPOSE:To eliminate the deterioration and breakdown of a bipolar integrated circuit especially by inserting a resistor between an external connection terminal presenting a high impedance and an internal circuit, forming a np junction between the resistor and a grounding wire as the part of the internal circuit. CONSTITUTION:An n-type epitaxial layer 2 on a p-type substrate having an n<+>- type buried layer 20 is selectively isolated by a p<+>-type layer 15 to form p-type layers 10, 11. n<+>-type layers 13, 14 are formed in the layer 12 and out the layer 11 in contact with the layer 10. Oxide films are connected between the layers 12 and 10 and between the layers 10 and 11 as designated by 16, 17, respectively, and electrodes 18, 19 and 20 are formed at the layers 13, 14 and substrate, respectively. When an electrode 21 is grounded and excessive positive voltage is applied to the terminal 16 becoming high impedance, it is dropped by the resistor 10 to limit the consumped power at the junction surfaces between the layer 14 and the layer 13 so as to eliminate the deterioration and breakdown of the IC. When negative voltage is applied excessively thereto, the pn junction between the electrodes 21 and 16 is operated to protect the junction surfaces between the layers 11 and 13. |
