| 摘要 |
PURPOSE:To perform a memory function for a semiconductor memory stably even if strain is thermally produced thereat by increasing the thickness of the insulating film in the vicinity of the end surface of a channel at the portion except the portion making contact with a source and a drain. CONSTITUTION:A first insulating film 5 is formed in approx. 600Angstrom on a channel region, only the central portion 52 is selectively etched to form in approx. 200Angstrom . Thus, the film 5 may become thicker than the central portion 51 in thw vicinity of the end surface making no contact with source 2 and drain 3. According to this configuration since the portion 51 is formed thickner, no crack occurs nor electric field is concentrated even if strain is applied to the portion 51 due to the difference in thermal expansion coefficient between the field oxide film 11 and a substrate 1. Thus, no apprehension of short is expected to perform stable memory function. |
