| 摘要 |
<p>PURPOSE:To prevent the decrease of adhering strength of a salient pole or the like to a semiconductor element by disposing an electrode connected directly to the element adjacent to an electrode connected to an external circuit not connected with the element within the opening of a protective film as a pad electrode. CONSTITUTION:An aluminum wire 5 is ohmic connected through an opening 4 of an insulating film 3 to a p-type layer 2 formed on an n-type substrate 1 to form an electrode 5. An aluminum electrode 7 not connected to an internal element is provided adjacent to an electrode 6 on the film 3. The electrodes 6, 7 are so disposed as to coexist in the openings of a PSG film 9 to form a pad electrode 8 with the electrodes 6, 7. Even if undesired product for disturbing the adhering strength betwen the substrate and the pad electrode owing to the electrochemical reaction due to the contact potential therebetween when etching the PSG film is produced on the electrode 6, it is reduced on the electrode 7 with the above configuration. Therefore, there can be obtained a device which does not reduce the adhering strength between the pad electrode 8 and the salient pole or substance forming the linear junction ball.</p> |
