| 摘要 |
PURPOSE:To form controllably a high resistance domain having resistance values variant in minute size by introducing a high density of impurity selectively to a monolayer and high resistance of poly-Si layer. CONSTITUTION:After accumulating poly-Si, an impurity is implanted to form a high resistance layer 4a, and the impurity is diffused in high density onto a desired portion with a mask of photoresist 5a or oxidized film 5b applied thereon, thus forming a low resistance layer 4b. With the high resistance layer 4a left through photoetching, the impurity is then diffused in high density around the layer 4a under a similar masking to obtain a medium resistance poly-Si layer 4c, and source and drain 6 are also provided. Thus an optimal load resistance layer 4a is formed through controlling resistance values, and a resistance layer with three variant values can be formed easily on a monolayer of poly-Si. A device can now be high integrated thereby. |
