| 摘要 |
PURPOSE:To minimize both current expansion loss and reverse recovery loss by a method wherein a diode part and an annular thyristor part surrounding it are provided on the surface of a semiconductor substrate, a cathode domain is also provided on the back, and gold is diffused in the substrate with the circumference of both front and back ends masked by an annular insulating film. CONSTITUTION:A p-type gate layer PB is diffused and formed on an n-type semiconductor substrate NB to work as anode layer, an annular n-type gate domain NB is provided therein, and the center of the layer PB is connected to a diode part 8 through an isolated zone 10 and the domain NE to a thyristor part 12 each electrically in reverse parallel. Then, an annular p-type cathode domain PE is also diffused and formed on the back of the substrate NB, and a reverse-conductive thyristor is constituted thereby. After that, insulating films 14 and 16 with which the surface domain NE is all covered and the back domain PE is covered about half outside are provided, gold is diffused in the substrate NB with the insulating films as mask, and a life time killer having a given distribution is formed in the substrate NB. |
