INTEGRATED CIRCUIT ARRANGEMENT IN MOS TECHNOLOGY WITH FIELD EFFECT TRANSISTORS,申请号GB19800004281-传众专利搜索

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发明名称	INTEGRATED CIRCUIT ARRANGEMENT IN MOS TECHNOLOGY WITH FIELD EFFECT TRANSISTORS
摘要
申请公布号	GB2043270(A)	申请公布日期	1980.10.01
申请号	GB19800004281	申请日期	1980.02.08
申请人	PHILIPS NV	发明人
分类号	H01L21/822;G01R31/28;G06F11/267;H01L21/66;H01L21/82;H01L27/04;H01L29/78;(IPC1-7):G01R31/28	主分类号	H01L21/822
代理机构		代理人
主权项
地址

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