| 摘要 |
<p>A light-emitting diode is comprised of: a semiconductor active layer, a semiconductor first clad layer formed on a surface of said semiconductor active layer, and a protrusion formed unitarily on a surface of said first clad layer for facing an input end of a light guide for light coupling therewith. A method of manufacturing the light emitting diode is comprised of the steps of forming a recess on one face of a semiconductor substrate, forming a semiconductor first clad layer on the abovementioned face of the semiconductor substrate, and selectively etching the substrate from the other face thereof so as to form a through-hole reaching said recess on said one face of the semiconductor substrate, thereby exposing at least a protrusion of said semiconductor first clad layer formed in said recess.</p> |
