| 摘要 |
PURPOSE:To improve integration and function of a integrated circuit using a multitude of Schottky barrier diodes (SBD) by forming a plural piece of p-type SBD on a substrate the surface layer of which is p-type. CONSTITUTION:An n<-> epitaxial layer 11 is provided on a p<-> Si substrate 9 through an n<+> buried layer 10 and isolated by a p<+> layer 12, and an n<+> extracted layer 13 is connected to the buried layer. An opening is provided in an oxidized film 14 on the surface and after plating with a Pt film 15, an eutectic alloy 16 is made through sintering. The Pt on the film 14 is removed, W 17 and Ti 18 are laminated, Al is further placed thereon and from forming an electrode 19 through photoetching, there is formed an n<+>-type SBD. According to this constitution, an isolation at every SBD is not required, a p<+> extraction on anode side can be performed in common by the layer 13, an occupied area is decreased to 30 through 50%, thus improving integration. Then, a formation of extra pn-junction for isolation is not necessary, and a parasitic capacity is decreased to improve operational speed. |
