发明名称 |
Methods of depositing materials on substrates |
摘要 |
A vapor deposition process which is carried out in a gaseous environment. The homogeneous nucleation of the vapor species in the gaseous environment is suppressed by heating the gaseous environment.
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申请公布号 |
US4224897(A) |
申请公布日期 |
1980.09.30 |
申请号 |
US19780943349 |
申请日期 |
1978.09.18 |
申请人 |
UNITED KINGDOM ATOMIC ENERGY AUTHORITY |
发明人 |
DUGDALE, RONALD A. |
分类号 |
C23C14/24;C23C14/30;C23C14/34;(IPC1-7):C23C11/00 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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