| 发明名称 |
EPITAXIAL GROWTH OF IIIA-VB COMPOUNDS AT LOW TEMPERATURES |
| 摘要 |
<p>The invention relates to a method for the epitaxial growth from the gaseous phase of III-V-compounds at homogeneous and low temperature by varying the atmosphere. The temperature in the epitaxial space is homogeneous and low (600.degree.C) and the qualities of the deposited layers are considerably improved. Application: Epitaxial growth Figure 1a.</p> |
| 申请公布号 |
CA1086611(A) |
申请公布日期 |
1980.09.30 |
| 申请号 |
CA19770273546 |
申请日期 |
1977.03.09 |
| 申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
HALLAIS, JEAN-PHILIPPE |
| 分类号 |
C30B25/02;C30B25/14;C30B29/40;H01L21/205;(IPC1-7):01J17/26 |
主分类号 |
C30B25/02 |
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