| 摘要 |
PURPOSE:To obtain a miniaturized high-precision resistor element by forming on a semiconductor substrate an insulating layer having a connection bore, laminating no- additive type poly-Si layers and an aluminum layer on the insulating layer, forming electrode wires by patterning, and selectively removing the aluminum layer. CONSTITUTION:A field oxide film 12 and a gate oxide film 13 are formed on a p-type Si substrate 11. Poly-Si layers 141, 142 are provided, and openings are made in the film 13. P is diffused into the openings to form n<+>-layers 15, 16 and set the resistance of the poly-Si layers 141, 142 to a low level. A CVDSiO2 film 17 is formed, and openings are selectively made therein. A no-additive type poly-Si layer 18 and an aluminum layer 19 to which approximately 1% Si is added are formed in layers. The layers 19, 18 are etched in the mentioned order to make openings therein and form electrodes 191, 192 in the layers 15, 16 and a wire 193 which is to be connected to the wire 142. A part of the aluminum layer 192 is selectively removed to expose a part of a Si layer 182 and form a resistor element R having electrodes 1921, 1922. According to this method, a miniaturized, high-precision resistor element having a high resistance and a high controllability can be integrated. |
