| 摘要 |
PURPOSE:To improve the reliability of the device preventing damage to the surface of the semiconductor substrate when the protective film is formed by forming an inorganic insulating protective film formed through a precoat by polyimide resin. CONSTITUTION:A resist film 6a is applied on the source and the drain electrodes 3 and 4 of FET of GaAs with the gate region exposed. Then, it is coated with a precoat for a polymide resin and treated at a specified temperature. With the lift-off of the resist film 6a and the precoat 9, an oxidation is performed at a given temperature, and an insulating protective film 10 made of inorganic substance such as SiO2 is formed by sputtering. Then, an opening is given on the film over the electrodes 3 and 4. In this method, the formation of the inorganic protective film protects the surface of the semiconductor from damage thereby improving the reliability of the device. Thus, production of a good yield is possible. |
