| 摘要 |
PURPOSE:To obtain the quality of the SiO2 at the same level as that producted by thermal oxidation without high temperature heating for a long time such as encountered during the method. CONSTITUTION:Water-cooled electrodes 4 and 5 are provided in a vacuum vessel 1. An SiO2 plate 8 of the evaporation is fixed on the electrode 5 while a substrate 9 is fixed on the electrode 4. Then, with vacuum exhaustion, Ar gas is introduced and a high frequency discharge is caused between the plate 8 and the substrate 9 by giving an impact on the plate 8 with an Ar gas ion whereby SiO2 is isolated away to be attached on the substrate 9. As the distance d between the plate 8 and the substrate 9 grows large, Ar gas ion even in the kinetic energy hits the plate so that SiO2 of uniform molecular form is attahced to the substrate 9. Thus, the close SiO2 film is formed, thereby affording chemical corrosion speed almost equal to the thermal oxdation film. The distance d is preferably 8cm or more. The use of SiO2 containing 1-10% by weight of impurity elements allows the production of an SiO2 film containing impurity while having a quality close to the thermal oxidation film. |
