| 摘要 |
PURPOSE:To improve the carrier density of impurity and increase the length of the life time of the carrier in a semiconductor device by adding non-monocrystal semiconductor having special crystal grain size with special amount of hydrogen or halogenide. CONSTITUTION:Impurity such as Cd, In, Sb or Te having more than 50 of atomic weight is, for example, added as hydrogen compound or halogenide to non-monocrystal semiconductor having 100Angstrom -10mu of grain size to thus contain hydrogen at maximum 30mol% or halogenide at maximum 5mol%. The semiconductor may, for example, include Si, SiC, Ge, Sn, SixC1-x (where 0.5<x<1), SixGe1-x (where 0<x<1), SixSn1-x (where 0<x<1) as mixture semiconductor. Thus, it can improve the carrier density of the impurity and increase the length of the life time of the carrier in the semiconductor device. |
