| 摘要 |
PURPOSE:To provide high intensity and preferable forward characteristics of a light emitting diode by suitably forming low and high density epitaxial layers at cooling speed when epitaxially growing in layer. CONSTITUTION:The first p-type epitaxial layer is grown in gallium solution added with zinc, gallium oxide and polycrystalline gallium phosphide at cooling speed of higher than 3 deg.C/min. On an n-type epitaxial layer formed on an n-type gallium phosphide substrate. Then, the second p-type epitaxial layer is grown at cooling speed of lower than 1.5 deg.C/min on the p-type epitaxial layer using gallium solution. |
