| 摘要 |
PURPOSE:To prevent the pollution by the open air by applying laser beams after an implantation of ion, without exposing to the open air, in the laser beam applying room which is connected to an ion implantation room and by giving an annealing. CONSTITUTION:An injection of ion impurities is performed by applying an ion beam 2 to the main section of a semiconductor substrate. Then, laser beams 11 are applied from a laser oscillation device 11 to the main section of a semicodncutor substrate 9 for which a crystalline damage has been given by the above-mentioned ion injection. Thus, only the damaged main section is liquefied, and it is recrystallized by stopping the application of laser beams, and the anealing is finished. Thus, without using a special high vacuum heating device, the main section of a semiconductor substrate 9 can be annealed in the vacuum room where there is no fear of pollution by the open air. |
