| 摘要 |
PURPOSE:To obtain a two-phase driving CCD of good transfer characteristic by a method wherein the end of each transfer electrode and the end of each island semiconductor layer which is to become a potential barrier are self-matched and thereby a well of an ideal potential is formed below each transfer electrode. CONSTITUTION:On the surface of an Si substrate 11 of one conduction type are laminated layers of an opposite conduction type layer 14, an SiO2 film 12, an Si3N4 film 13 and subsequently, polycrystalline Si layer 15 which is to become transfer electrodes on one side and which contains a high concentration impurity, an SiO2 film 16 and an Si3N4 film 14. Next, photoresist film masks 18a-18f are provided at fixed intervals on top of this. By etching, the laminated layers between these masks up to the film 16 are removed. By ion injection, island semiconductor layers 19a-19f are formed in the layer 14. Subsequently, masks are renewed, and SiO2 films 20 and 16 are provided covering one island semiconductor layer totally and expanding over to the edge of the adjacent layers, and by etching, the 1st transfer electrodes 15a-15c are obtained. These are surrounded by SiO2 films 24a-24c, and the 2nd transfer electrodes 25a-25d are provided on layers 19a-19f. |
