| 摘要 |
PURPOSE:To obtain a miniaturized and of high density impurity-added layer by growing a semiconductor layer selectively in a grooved pattern surrounded by an insulating film on the surface of a semiconductor. CONSTITUTION:An Si3N4 film 12 is formed selectively on an Si substrate 11, and Si layes 13, 14 of single crystal and poly-crystal are grown on each of them. The poly-Si 14 is removed to expose the Si3N4 film 12, which is coated with an SiO2 film 15. Next, the Si3N4 film 12 is removed with the SiO2 film 15 as a mask. Then, an Si layer 16 of single crystal or poly-crystal is formed on the exposed substrate 11, and its height is adjusted so as to be almost same as the single crystal layer 13. From adding an impurity to the Si layer 16 with the SiO2 film 15 as a mask, it can be diffused deeply as necessary without expanding circumferentially, thus forming a miniaturized domain of high density. |
