| 摘要 |
PURPOSE:To reduce the number of manufacturing processes as well as to eliminate the positioning of a pattern by a method wherein a pattern penetrating an absorption layer is formed on the absorption layer provided on a mask substrate, a resist layer is coated thereon, and energy rays are projected once from the side of the substrate. CONSTITUTION:An X-ray absorbing layer 2 is formed on an X-ray transmitting film substrate 1 by vapor-depositing a W-film, for example. An electron beam resist layer 5 is coated thereon, an electron beam 6 of the prescribed width is projected thereon, the projected part is removed by developing, and a resist pattern of the width W1 of about 0.3mum is formed. Then, after the absorbing layer 2 has been etched using the resist pattern as a mask, the resist layer 5 is removed. A negative photoresist layer 7 is coated on the layer 2, ultraviolet rays 8 are projected from the side of the substrate 1, and the resist layer 7 is subjected to exposure of both direct light and diffraction beam which pass through the resist pattern part. After a developing operation has been finished, the non-exposed part of the resist layer 7 is removed, a negative resist pattern is formed. Then, W is vapor-deposited on the layers 2 and 7, the pattern on the layer 7 is dissolved, and the mask for X-ray transfer is completed. |
