Insulating substrate integrated circuit - has cross connections With N and P-type poly-silicon for buried contacts of IGFETs

摘要

Increased density of integrated CMOS circuits is ensured by p-type cross connection of polysilicon with buried contact of drain zone in the p-channel of IG SET of one inverter. If forms a gate of p-channel in the IGFET of the other inverter while the n-type cross connection of polysilicon forms the buried contact of the drain zone of the n-channel of the IGFET of one inverter and a gate of similar channel in the other inverter. The application of polysilicon cross connections results in the formation of diodes which do not disturb the circuit based on the SOS substrates.