| 摘要 |
PURPOSE:To make selection of memory elements high-speed and reduce power consumption by constituting a device so that the word line of a nonselected memory element group may be prevented from being high. CONSTITUTION:The output of line decoder XD0 is high, and other line decoders XD1-XDn-1 are low, and MIS transistors TrTOR-T(n-1)R and QOL to Q(n-1)L are turned on, and MIS TrTOL to T(n-1)L and QOR-Q(n-1)R are turned off. As the result, no line decoder signal is transferred to memory element group 1 to make memory element group 1 nonselected. Meanwhile, though signals of all line decoders are transferred to memory element group 2, only word line WOR becomes high and all other word lines become low because the output of only decoder XD0 is high. Consequently, decoder XD0 drives only word line WOR in the selected 0th line of selected element group 2 and does not drive word line WOL of element group 1. As a result, the load capacity driven by the line decoder is only the one-side element group, so that the load capacity can be reduced to the half approximately. |
