发明名称 |
Silicon solar cells. |
摘要 |
<p>A substrate (1) is made for silicon solar cells by heating a sheet of large-grained silicon steel at a temperature of at least about 1300°C in an atmosphere of hydrogen and tungsten hexafluoride (or hexachloride) at a partial pressure ratio of hydrogen to tungsten hexafluoride of about 3 to about 6 to deposit an epitaxial layer of tungsten (3) on said sheet of silicon steel. Epitaxial silicon (4) can then be deposited in a conventional manner on the layer of epitaxial tungsten.</p><p>With such substrate used. diffusion of iron into the silicon layer which would otherwise make the cell ineffective is minimized.</p> |
申请公布号 |
EP0015732(A1) |
申请公布日期 |
1980.09.17 |
申请号 |
EP19800300615 |
申请日期 |
1980.02.29 |
申请人 |
WESTINGHOUSE ELECTRIC CORPORATION |
发明人 |
THOMAS, DONALD EARL |
分类号 |
H01L31/04;C30B25/02;C30B25/18;H01L31/0392;(IPC1-7):01L31/06;01L31/18;30B25/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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