| 发明名称 |
Method of producing semiconductor devices. |
| 摘要 |
<p>A method of producing a semiconductor device comprising a step of forming a field isolating oxide layer (14) from an amorphous silicon layer (11) by oxidation at a relatively low temperature. Prior to the oxidizing treatment, a portion of the amorphous silicon layer (11) is recrystallized into a single-crystalline silicon layer (13) by laser irradiation.</p> |
| 申请公布号 |
EP0015677(A1) |
申请公布日期 |
1980.09.17 |
| 申请号 |
EP19800300454 |
申请日期 |
1980.02.15 |
| 申请人 |
VLSI TECHNOLOGY RESEARCH ASSOCIATION |
发明人 |
TOGEI, RYOIKU |
| 分类号 |
H01L21/76;H01L21/20;H01L21/268;H01L21/316;H01L21/321;H01L21/762;(IPC1-7):01L21/76;01L21/31;01L21/268;01L21/86 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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