Semiconductor device having a guard ring and process for its manufacture.

摘要

The invention relates to semiconductor devices comprising a guard ring. The conventional processes for the manufacture of guard rings, by localised diffusion through windows in a thick mask, give rise to a superficial contamination of the crystal and to crystal perturbations. The process according to the invention consists in depositing first of all on the crystal a diffusion source (44), limited to the location of the future guard ring (43), and then in carrying out the diffusion. The junctions formed in this manner are reliable and free from noise. Application to diodes and transistors. <IMAGE>