Sensing amplifier for floating gate memory devices

摘要

An MOS sensing amplifier for sensing the binary state of floating gate memory devices in a read-only memory is disclosed. The potentials on the column lines in the memory are held to a narrow voltage swing. A pair of "zero" threshold voltage transistors having slightly different threshold voltages are used to maintain the potentials on these lines. A potential developed from the column line is compared with a reference potential developed with a "dummy" biasing network and a "dummy" floating gate memory device.