| 摘要 |
PURPOSE:To simply eliminate leakage currents in a plurality of generating sections formed continuously of amorphous silicon layers on an insulating substrate for mass production by forming a plurality of generating sections on the susbstrate and etching and removing silicon layers of the respective generating sections with electrodes formed on the respective sections as masks. CONSTITUTION:The first electrodes 12 having extensions 14, 15 are coated in space on an insulating substrate 7 using tin oxide, indium oxide, acid indium.tin and the like. Then, an amorphous silicon layer 11 consisting of a p-type layer 3, non-doped layer 4 and an n-type layer 5 is grown on the entire surface including the electrodes 12, and the second electrodes 13 made of aluminum or the like are coated in space on the electrodes 12. Then, with the electrodes 13 as masks a layer 11 is etched and removed to the bottom of the layer 4, a groove 20 is formed thereon, and pn-junction is vanished between the generating sections disposed between the electrodes 13 and 12. Thus, no leakage current is generated between the generating sections made of adjacent layers 11. |
