| 摘要 |
PURPOSE:To provide a low noise junction type field effect transistor (J-FET) by epitaxially growing a high resistance layer and an active layer while matching with a lattice on a monocrystal line substrate, deffusing source and drain regions in the active layer, and forming a gate electrode between the source region and the drain region. CONSTITUTION:A high specific resistance layer 2 of Al1-x-yGaxInyAs1-zSbz is epitaxially grown on a monocrystal line substrate 1 of GaSb or InAs while retaining x=0-1, y=0-1, (x+y)<1 and z=0-1. Then, an active layer 3' of n- or p-type Ga1-uInuAs1-vSbv is epitaxially grown on the layer 2 while matching the lattice similarly to the above, and an n<+>-type source region 4' and an n<+>-type drain region 5' are diffused in the layer 3' retaining u=0-1, v=0-1. Then, metal electrodes 4, 5 are mounted on the regions 4', 5', respectively, and a Schottky junction metal gate electrode 9 is coated through an insulating film 8 on the layer 3' exposed therebetween. Thus, even if the FET is not operated in cryogenic temperature, it can stably operate. |
