| 摘要 |
PURPOSE:To uniformly form a CVD film on a substrate by a CVD device by reciprocating a nozzle for supplying stock gas substantially in parallel with the moving direction of a susceptor for carrying and heating the substrate. CONSTITUTION:A susceptor 2 for carrying and heating a substrate 1 at predetermined temperature moves at constant speed v. A nozzle 3 having a plurality of slit-like injection ports is provided oppositely with the susceptor 2, and reciprocated substantially in parallel with the moving direction of the susceptor 2 in predetermined period. When the end of the nozzle 3 moves at speed v, the relative speed between the substrate 1 and the nozzle 3 becomes v+V, If v<V, the influence of the moving speed of the susceptor can be ignored. Thus, the supply of stock gas to the substrate 1 is equalized to uniformly form the thickness of the CVD film formed on the substrate. |
