发明名称 INTEGRATED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 PURPOSE:To equalize the heat dissipating characteristics of two complementary polar transistors formed in an integrated circuit device by fixing heat dissipating elements to the same plane in such a manner that the back surfaces of the elements are exposed when forming the integrated circuit device using the two transistors. CONSTITUTION:When heat dissipating elements are secured to the back surfaces of complementary polar transistors 2, 4, respectively, two elements 6, 7 of the same shape with the same height are fixed to the back surfaces of the transistors 2, 4, respectively using bonding solder 8 instead of one common heat dissipating element. Then, the surface sides of the transistors 2, 4 are molded with resin 5 so that the back surfaces of the elements 6, 7 are exposed with external atmosphere. Thus, unbalanced heat dissipating characteristics are eliminated between the transistors 2 and 4 to improve the reliability of the transistors.
申请公布号 JPS55120154(A) 申请公布日期 1980.09.16
申请号 JP19790028086 申请日期 1979.03.09
申请人 MATSUSHITA ELECTRONICS CORP 发明人 YOKOZAWA MASAMI;FUJII HIROYUKI;TATENO KENICHI;HATAKEYAMA YUKIO;NISHIKAWA MIKIO
分类号 H01L23/42;H01L23/28;H01L23/29;H01L23/31;H01L23/433;H01L23/48;H01L29/78 主分类号 H01L23/42
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