WERKWIJZE TER VERVAARDIGING VAN EEN HALFGELEIDER- INRICHTING.

摘要

A method of making a semiconductor device is described which combines ion implantation with another process of forming an impurity-containing semiconductor region. In particular, a surface-adjoining region of a semiconductor is formed in such manner that the portion of that region adjacent the surface is formed by a process other than ion implantation, whereas a surface remote or buried portion of that region which defines a P-N junction is formed by ion implantation. This combination of steps yields improved semiconductor devices.