| 摘要 |
PURPOSE:To prevent the deformation and the generation of surface crystal defect of a wafer during heat treatment by a method wherein a holder in the diffusion furnace is constructed of horizontal holder plates of prural stage which supports a wafer by the major part of the back surface. CONSTITUTION:A holder 5 which is made of material of large heat capacity such as quartz, carbon silicate, or the like, and has an outer frame 9 that supports holizontal holder plate 8 that supports semiconductor wafer 6 by all back surface or by necessary back surface to prevent a wafer from its deformation in the period of heat treatment is installed in a diffusion furnace which has a holder supporter 4 which can move up and down and is placed beneath a quartz reactor case 2 which has a heating device 3 outside it. Heat treatment is performed after fitting and closing a holder support 4 and base 1. By utilizing such diffusion furnace, freedom from frictional contact between quartz reactor case and holder eliminates possible scattering of quartz fragment, and wafer's deformation during heat treatment or crystal defect is eliminated. |
