| 摘要 |
PURPOSE:To enhance the reverse withstand voltage of a semiconductor device and reduce unnecessary capacity thereof by bringing metal and substrate into contact with a Schottky barrier through an insulating film having slow oblique surface on a semiconductor substrate. CONSTITUTION:An n<+>-type layer is buried in a p-type silicon substrate 21, an n- type epitaxial layer 22 is separated with a P layer, the P layer 24 is selectively formed thereon. An oxide film 26 and a nitride film 27 are used as masks to form an oxide film 28 and a base layer 29 thereon. At this time a buzz peak occurs to specify an electrode opening. After an opening is selectively formed at the film 28 to form an n-type emitter layer 30, the nitride film 27 and the oxide film 26 are removed to form Ti electrodes 31-33. Since the contact portion of the metal forming contact between the epitaxial layer and Schottky barrier with the epitaxial layer is specified with slow oblique insulating layer, it can restrict unnecessary expansion of depletion layer to improve the reverse withstand voltage of a semiconductor device and to stabilize the operation of the device. Accordingly, a protection ring is not necessary to reduce the corresponding capacity so as to enhance the integrity of the device. |
