| 摘要 |
PURPOSE:To reduce the heat of a rectifier array by directly coupling two MOSFETs to provide a diode function of one unit, connecting both gate electrodes each other, and connecting one drain electrode thereto. CONSTITUTION:An N<+>-type buried layer 2 is selectively formed on a P-type substrate to form a P-type epitaxial layer 3 thereon. N-type layers 5a, 5b are formed on the layer 3. Openings are perforated at predetermined positions on an insulating film 4 on the surface, anisotropically etched to form V-shaped grooves 6, and the layers 5a, 5b are equally divided via the grooves 6. An insulating layer 7 is formed on the oblique surface of the groove 6, openings are selectively perforated in the film 4 to form anode and cathode electrodes on the layers 5a, 5b and a gate 8 on the film 7, and an electrode 9 on the substrate. According to this configuration the length of the conductive channel can be extremely short, and on voltage can be lowered by employing the potential of the substrate. Accordingly, the heat of the rectifier array can be extremely lowered at conducting time. |
