| 摘要 |
PURPOSE:To prevent a writing current of a junction breakdown field programmable cell array semiconductor device from shunting by dividing a writing cell array into common collector transistor blocks, separating the respective blocks, and providing one collector leading layer within the block. CONSTITUTION:An N<+>-type buried layer 2 and an N<->-type epitaxial layer 3 in common collector are formed on a P<->-type silicon substrate 1 to form a P-type base layer 4 and an N-type emitter layer 5 thereon. An N<+>-type collector leading layer 6 is formed to reach the layer 2, elements are separated with a P<+>-type layer 8 to form emitter electrodes E9-E14 and collector electrode C. When a writing pulse for reversely biasing the junction surface between the layer 5 and 4 is applied between any emitter and the collector, the writing current is flown through only one collector leading layer 6 into the collector electrode C without shunting. Accordingly, the writing current can be concentrated at the base and collector junction surface readily to reduce the writing current so as to largely improve the reliability of the writing operation. |
