| 摘要 |
<p>PURPOSE:To increase the processing speed of a processor, to reduce the number of power supply terminals, and to use it by an one-chip information processor by operating a processing part by a 1st voltage and a memory part by a 2nd boosted voltage. CONSTITUTION:The characteristic of RAM of CMOS structure is shown by curve 50, and the data transfer time is between 150 and 200mus at operating voltage 5V, but approximate 100mus at 7V. Of one-chip information processor 10, RAM part 11 and register part 12 are of CMOS structure and operate as data holding parts and its supply voltage is VDD. Processing part 13 including an arithmetic processing part, control part, etc., on the other hand, consists of N (or P) channel IGFET and is applied with external supply voltage VCC. Here, VDD is a voltage obtained by boosting VCC by booster 15 and inside of the unit, relation VDD>VCC is born. Further, breaker 16 which isolates an input passage between processing part 13 and VCC when VCC is OFF is provided between a power input stage and processing part 13.</p> |
