| 发明名称 |
Process for making a composite semiconductor body and semiconductor body so produced. |
| 摘要 |
<p>Compound semiconductor bodies (13,14) are formed by bonding layers (12) of polycrystalline supporting material to the two opposite faces of a monocrystalline semiconductor wafer (11) and then cutting the semiconductorwafer into two bodies in a plane parallel to said faces. The cut surface of each semiconductor body (13,14) is then polished.</p> |
| 申请公布号 |
EP0014824(A1) |
申请公布日期 |
1980.09.03 |
| 申请号 |
EP19800100090 |
申请日期 |
1980.01.09 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDMONDS, HAROLD DONALD;LYONS, VINCENT JAMES;MARKOVITS, GARY |
| 分类号 |
H01L21/52;B28D1/00;B28D5/00;H01L21/00;H01L21/02;H01L21/302;H01L21/304;H01L21/306;H01L21/78;H01L23/492;(IPC1-7):01L21/02;01L21/70 |
主分类号 |
H01L21/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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