| 发明名称 |
Method of increasing the gettering effect in the bulk of semiconductor bodies utilizing a preliminary thermal annealing step |
| 摘要 |
The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750 DEG -900 DEG C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.
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| 申请公布号 |
US4220483(A) |
申请公布日期 |
1980.09.02 |
| 申请号 |
US19790066593 |
申请日期 |
1979.08.14 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORP |
发明人 |
CAZCARRA, VICTOR G |
| 分类号 |
C30B33/00;H01L21/322;H01L29/167;(IPC1-7):H01L21/32;H01L29/04 |
主分类号 |
C30B33/00 |
| 代理机构 |
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| 主权项 |
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