| 摘要 |
<p>PURPOSE:To provide external quantum efficiency equivalent to those of GaP red LED and GaP gree LED in a solid light emitting element by forming a red light emitting pn-junction surface on the Ga surface 111 and a green light emitting pn- junction surface on the P surface 111 of a GaP substrate. CONSTITUTION:An n-type epitaxial layer 12 and a p-type epitaxial layer 13 are sequentially grown on the P surface 111 of an n-type GaP substrate 11 to form a green light emitting pn-junction 14 therebetween. Then, an n-type epitaxial layer 15 and a p-type epitaxial layer 16 are sequentially grown on the Ga surface 111 of the substrate 11 to form a red light emitting pn-junction 17 therebetween. Thereafter, a groove of suitable width is formed at the part of the layers 12, 13 and substrate 11 or at the part of the layers 15, 16 and substrate 11, and electrodes 18-20 are formed thereon. It is prefered to provide the pn-junction 17 in such a manner that the carrier density Nd of the n-type epitaxial layer is Nd=0.5X10<17> pieces/cm<3>, the carrier density Na of the p-type epitaxial layer is Na=0.5X10<17>-30X10<17> pieces/cm<3>, and there is a relationship of Nd<=Na.</p> |
