| 摘要 |
PURPOSE:To form a fog-free resist image of high accuracy by heat treating a negative type resist with an insolubilized image formed by electron beam irradiation prior to development to improve the thickness of a resist film and raise the gamma value after development. CONSTITUTION:An electron beam-sensitive negative type resist such as a glycidyl methacrylate (co)polymer or polystyrene (derivative) coated on a substrate is irradiated with electron beams in such a dose amt. that no crosslinking reaction is induced at the periphery of the irradiated region, forming an insolubilized image. The resist with the image formed is then heat treated at a temp. from about 30 deg.C above the glass transition temp. (Tg) of the resist to about 30 deg.C below the temp. prior to development. By this treatment the crosslinking degree of the irradiated portion of the resist film can be enhanced without deteriorating the solubility of the unirradiated portion to a developer, and a resist image of high accuracy can be formed. |
