| 摘要 |
PURPOSE:Not only to improve the controllabvility of an active layer and a buried layer in width but also restrain a large stress from generating by a method wherein the side of the active layer is removed through a selective etching to make the central part of the active layer, which is protected against the etching by a pair of stripe-like regions, an active region which is contributory to the light emission. CONSTITUTION:An n-type InP buffer layer 11 (3mum or so in thickness) is laminated on an n-type InP substrate 10. Next, a GaInAs active layer 12 is laminated thereon and the active layer 12 is selectively etched to form a pair of stripes 20 which make the active layer 12 separate into a central active layer 12a and side active layers 12b. In this process, the shape of the stripes 20 is so formed as to make a buried region gradually larger in width near and toward the end face. And, a P-type InP clad layer 13 and a P<+>-type GaInAsP cap layer are laminated to form a mesa 19. In this process, buried layers 13a, which sandwich the active region 12a formed in one piece with the P-type InP clad layer 13 in between them, are formed at the pair of stripes 20. Next, the side active layers 12b are removed through an etching. |
