| 摘要 |
PURPOSE:To prevent infiltration of water onto interface by having metallic film region consisting of Al or the like on the semiconductor substrate through the medium of silicon dioxide film etc., surrounding semiconductor element, and by having phenyl ladder silicone resin coating. CONSTITUTION:Silicon dioxide film 2 is formed on the surface of semiconductor substrate 1, for which base and emitter regions have been formed on the surface. Then, when forming base electrode 3 and emitter electrode 4 with vacuum evaporation method and photo etching method, metallic film region 7 is formed at the same time so as to surround base electrode 3. Next, after bonding lead wire 5 to electrode, undercoat resin layer 6, consisting of phenyl ladder cilicone resin, is formed. Hereby, as there is no deterioration of adhesive property, caused by water, between metallic film region 7 and undercoat resin layer 6, water is now shut out at the bonded section between metallic film region 7 and undercoat resin region 6, and water does not come into inside. |
